Immersion fluid for immersion Lithography, and method of performing immersion lithography

ABSTRACT

An immersion lithographic system  10  comprises an optical surface  51 , an immersion fluid  60  with a pH less than  7  contacting at least a portion of the optical surface, and a semiconductor structure  80  having a topmost photoresist layer  70  wherein a portion of the photoresist is in contact with the immersion fluid. Further, a method for illuminating a semiconductor structure  80  having a topmost photoresist layer  70  comprising the steps of: introducing an immersion fluid  60  into a space between an optical surface  51  and the photoresist layer wherein the immersion fluid has a pH of less than  7 , and directing light preferably with a wavelength of less than 450 nm through the immersion fluid and onto the photoresist.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority based on U.S. Provisional PatentApplication Ser. No. 60/498,195, filed Aug. 25, 2003, entitled“Immersion Fluid for Immersion Lithography, and Method of PerformingImmersion Lithography”. The provisional application is incorporatedherein by reference in its entirety.

This application is related to U.S. Provisional Application Ser. No.60/494,154 filed Aug. 11, 2003, which application is incorporated hereinby reference in its entirety.

TECHNICAL FIELD

The present invention relates generally to the fabrication ofsemiconductor devices, and more particularly to an immersion fluid and asystem and method for performing immersion lithography.

BACKGROUND

In photolithographic systems, there is a need to achieve a highresolution in order to resolve high-resolution patterns, such as images,lines, or spots. In a photolithographic system employed in theintegrated circuit (IC) industry, light is projected onto a resist forthe purpose of patterning an electronic device. Photolithographicsystems have been used in the IC industry for many decades and areexpected to resolve line widths of 50 nm and below in the future.Significant improvement in the resolution of photolithographic systemshas been one of the most important enablers for the manufacture of highdensity and high-speed semiconductor IC chips.

The resolution R of a photolithographic system for a given lithographicconstant k₁, is given by R=k₁λ/NA, where λ is the operational wavelengthof the imaging light source, and the numerical aperture NA is given bythe NA=n sin θ. Angle θ is the angular semi-aperture of the system, andn is the index of the material filling the space between the system andthe substrate to be patterned.

There are three trends that are conventionally employed to effectresolution improvement in photolithographic technology. First, thewavelength λ has been progressively reduced from mercury G-line (436 μm)to the ArF excimer laser line (193 nm), and further to 157 nm andpossibly into the extreme ultraviolet (EUV) wavelengths. Second, theimplementation of resolution enhancement techniques such asphase-shifting masks and off-axis illumination have led to a reductionin the lithographic constant k₁ from about 0.6 to about 0.4. Third, thenumerical aperture NA has been increased from about 0.35 to about 0.8with improvements in optical designs, manufacturing techniques, andmetrology. However, these conventional techniques of improving theresolution are approaching physical and technical limits. For example,the value of NA, i.e. n sin θ, is limited by the value of n. Iffree-space optical systems are used, where the value of n is unity, thevalue of NA has an upper bound of unity.

Recently, immersion lithography has been developed which allows NA to befurther increased. In immersion lithography, a substrate to be patternedis immersed in a high-index fluid or an immersion medium, such that thespace between the final optical element or lens and the substrate isfilled with a high-index fluid (n>1). In this way, the lens can bedesigned to have an NA larger than 1.

High-index fluids such as perfluoropolyether (PFPE), cyclo-octane, andde-ionized water may be used. Since the value of NA can be furtherincreased, immersion lithography therefore offers better resolutionenhancement over conventional lithography. The high-index fluid shouldsatisfy several requirements: it should have a low absorption for thewavelength being used; its index of refraction should be reasonably highto make the index modification worth its while, and it should bechemically compatible with the photoresist on the substrate as well asthe optical element and the coatings in contact with the fluid.

In certain prior art schemes of performing immersion lithography wherewater is used as the immersion fluid, the pH of the water is notcontrolled. Photoresists, particularly chemically amplifiedphotoresists, may be contaminated by hydroxyl ions (OH⁻) present in theimmersion fluid or water. Certain optic lens materials, such as calciumfluoride, dissolve in water to a certain extent.

The following references are related to aspects of the preferredembodiments and are herein incorporated by reference in their entirety.

-   [1] M. Switkes et al., “Methods and apparatus employing an index    matching medium,” U.S. Patent Application Publication No. US    2002/0163629.-   [2] J. S. Batchelder, “Method for optical inspection and    lithography,” U.S. Pat. No. 5,900,354.-   [3] K. Takahashi, “Immersion type projection exposure apparatus,”    U.S. Pat. No. 5,610,683.-   [4] T. R. Corle et al., “Lithography system employing a solid    immersion lens,” U.S. Pat. No. 5,121,256.-   [5] J. A. Hoffnagle et al., “Liquid immersion deep-ultraviolet    interferometric lithography,” J. Vacuum Science and Technology B,    vol. 17, no. 6, pp. 3306-3309, 1999.-   [6] M. Switkes et al., “Immersion lithography at 157 nm,” J. Vacuum    Science and Technology B, vol. 19, no. 6, pp. 2353-2356, 2000.

SUMMARY OF THE INVENTION

The preferred embodiment relates to the field of lithographic systems,and more specifically, to immersion lithographic systems that employ animmersion fluid between a final optic and a substrate. In one aspect,the invention teaches an immersion fluid for use with immersionlithographic systems.

In accordance with a preferred embodiment of the present invention, animmersion fluid with a pH less than 7 contacts at least a portion of theoptical surface.

In accordance with another preferred embodiment of the presentinvention, an immersion lithographic system for projecting light havinga wavelength of less than 197 nm comprises an optical surface, animmersion fluid with a pH less than 7 contacting at least a portion ofthe optical surface, and a semiconductor structure having a topmostphotoresist layer wherein a portion of the photoresist is in contactwith the immersion fluid.

In accordance with another preferred embodiment of the presentinvention, a method for illuminating a semiconductor structure having atopmost photoresist layer comprises the steps of, introducing animmersion fluid into a space between an optical surface and thephotoresist layer wherein the immersion fluid has a pH of less than 7,and directing optical energy through the immersion fluid and onto thephotoresist.

In accordance with yet another preferred embodiment of the presentinvention, a method for illuminating a semiconductor structure having atopmost photoresist layer comprises the steps of: introducing animmersion fluid into a space between an optical surface and thephotoresist layer wherein the immersion fluid has a pH of less than 7,and directing light with a wavelength of less than 450 nm through theimmersion fluid and onto the photoresist.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIG. 1 illustrates a simplified diagram of an immersion lithographysystem;

FIGS. 2 a and 2 b illustrate the interaction between an immersion fluid(water, for example) and an exposed photosensitive material;

FIGS. 3 a and 3 b illustrate a top portion of an exposed photoresisthaving a T-shape, and a top portion of an exposed photoresist having abetter resist profile due to elimination of base contamination from theimmersion fluid;

FIGS. 4 a and 4 b illustrate the interaction between an immersion fluid(water, for example) and a lens material;

FIG. 5 illustrates the solubility of a calcium fluoride lens as afunction of the pH of an immersion fluid; and

FIG. 6 illustrates the solubility of a calcium fluoride lens as afunction of the concentration of F⁻ in an immersion fluid.

DETAILED DESCRIPTION OF THE ILLUSTRATIVE EMBODIMENTS

The making and using of the presently preferred embodiments arediscussed in detail below. It should be appreciated, however, that thepresent invention provides many applicable inventive concepts that canbe embodied in a wide variety of specific contexts. The specificembodiments discussed are merely illustrative of specific ways to makeand use the invention, and do not limit the scope of the invention.

A simplified example of an immersion lithography system 10 isillustrated in FIG. 1. System 10 contains a source 20 emitting a beam ofoptical energy 21 through a lens 22. The energy is then passed through amask 30 and an imaging module 40, and a final lens 50 having an opticalsurface 51. A fluid 60 fills at least the space between lens 50 and aphotosensitive material 70. Photosensitive material 70 is in contactwith a substrate 80 of a semiconductor device.

In the preferred embodiment, the substrate 80 is a semiconductorsubstrate that is being fabricated as an integrated circuit. Forexample, the substrate 80 can be a silicon substrate (e.g., monolithicsilicon substrate or a silicon-on-insulator) in which transistors (andother components) are formed. These components may be interconnectedwith metal layers.

The photosensitive material 70 can be a photoresist or other maskingmaterial. In the preferred embodiment, the material 70 can be patternedin very small dimensions. For example, polysilicon (or other conductivematerial) lines can be etched in alignment with the patterns in thematerial 70 to create, for example, MOS gates having lengths of 50 nm orless. As another example, metallization lines (e.g., copper damascene)can be formed with dimensions of about 200 nm or less.

The substrate 80 is supported on a wafer support structure or stage 85.FIG. 1 illustrates that the liquid 60 is disposed between the opticalelement 51 and the photosensitive material 70. It should be understood,however, that during the optical patterning, the substrate 80 and/or thestage 85 can be immersed in the immersion fluid 60.

Referring to FIG. 2 a, a cross-sectional view of the final portion oflithographic system 10 is shown. The final optic lens 50 is in contactwith an immersion fluid 60. In this example, the immersion fluid iswater. It is understood that other immersion fluids such as cyclo-octaneand perfluoropolyether (PFPE) can be used. The immersion fluid maycontain hydroxyl ions. In water, hydroxyl ions are present due to thedissociation of water molecules according to the following equilibria:H₂O(l)≈H⁺(aq)+OH⁻(aq)  (Eq. 1)where H⁺ is a hydrogen ion, and OH⁻ is a hydroxyl ion. The symbols l andaq denote liquid and aqueous states, respectively. The fluid 60 contactsa portion of the photosensitive material or photoresist 70 at aninterface 90, as shown in FIG. 2 a. The photoresist 70 may, for example,be a photoresist used in lithography employing 193 nm or 157 nm orsmaller wavelengths.

When a portion of the photosensitive material 70 is exposed to photonsof a predetermined dose, a photo-generated catalyst is formed in theexposed portion of the photosensitive material. Photo-generatedcatalysts are employed in chemically amplified (CA) photoresists, whichare widely used in lithography using 193 nm and 157 nm wavelengths. Thephoto-generated catalysts are usually acid catalysts, as represented bythe formula HA. For example, the acid catalyst HA may protonate an esterfunctional group in a photoresist polymer molecule, resulting in theformation of a developer-soluble carboxylic acid and the regeneration ofa proton or hydrogen ion H⁺. The proton or hydrogen ion then protonatesanother ester group to result in the formation of another solublecarboxylic acid and the regeneration of H⁺. This chain reactioncomprising protonation, formation of a soluble product, and regenerationof a proton gives rise to chemical amplification.

Referring now to FIG. 2 b, a magnified perspective 100 of the interface90 between the water 60 and an exposed portion of the photosensitivematerial 70 is illustrated. It should be noted that the acid catalystmay be in the form HA, or be in the dissociated form, H⁺ and A⁻, asdepicted FIG. 2 b. As taught in this invention, the presence ofsignificant quantities of hydroxyl ions in the immersion fluid 60, e.g.water, is undesirable. Hydroxyl ions may diffuse (110) into the surfaceof the photosensitive material, and neutralize the acid catalyst.Neutralization of the acid catalyst depletes the amount of acid catalystin the immediate vicinity of the water. This impairs the chemicalamplification effect, at least in the region in the immediate vicinityof the water.

Referring now to FIG. 3 a, after the development of the photosensitivematerial or photoresist 70, for example, in a tetramethylammoniahyroxide (TMAH) solution, exposed portions 200 of the photoresist willbe dissolved. Regions where the acid catalyst is depleted will dissolveto a lesser extent due to the suppression of the chemical amplificationeffect. This results in photoresist lines with a T-shaped top 210 beingformed after development, as schematically shown in FIG. 3 a. Therefore,a consequence of the neutralization of the acid catalyst in the surfaceregion of the photosensitive material is the formation of T-shaped lineswith increased linewidth L₁.

According to a preferred embodiment of the present invention, theconcentration of hydroxyl ions in the immersion fluid should be reducedbelow 10⁻⁷ mole/liter (mole/L or mol./dm³). The symbols mol., L, and dmdenote mole, liter, and decimeter, respectively. By reducing thehydroxyl ion concentration below 10⁻⁷ mole/L, the acid catalystdepletion effect in the surface region of the exposed photoresist can besuppressed. By reducing the concentration of hydroxyl ions and thereforethe amount of hydroxyl ions that diffuse into the photoresist, thedevelopment of the photoresist will result in a better resist profile220 with linewidth L₂, as shown in FIG. 3 b.

One way to reduce the hydroxyl ion concentration in water is to addexcess protons or hydrogen ions. The addition of excess hydrogen ions inwater pushes the equilibria described by Eq. 1 towards the left, so thatat equilibrium, the concentration of hydroxyl ions is less than 10⁻⁷mole/liter. The addition of hydrogen ions may be effected by theaddition of an acid in the water. The acid may be an organic acid suchas ethanoic acid or methanoic acid, or the acid may be an inorganic acidsuch as dilute hydrofluoric acid or dilute sulphuric acid, orcombinations thereof.

Therefore, according to a preferred embodiment of the present invention,the immersion fluid should preferably have an excess of hydrogen ions toreduce the equilibrium concentration of hydroxyl ions. The concentrationof hydrogen ions in the immersion fluid at equilibrium should preferablybe more than 10⁻⁷ mole/L, i.e., the pH of the immersion fluid shouldpreferably be less than 7. The concentration of hydrogen ions is morepreferably in the range of about 10⁻⁷ to about 10⁻² mole/L, morepreferably in the range of about 107 to about 114 mole/L, even morepreferably in the range of about 10⁻⁷ to about 10⁻⁵ mole/L, and evenmore preferably in the range of about 10⁻⁷ to about 10⁻⁶ mole/L. Theabove-mentioned concentrations can be measured at room temperature,i.e., 300 degrees Kelvin. Corresponding to the above mentioned hydrogenion concentrations, the immersion fluid should have a pH in the range ofless than 7, preferably about 2 to about 7, more preferably about 4 toabout 7, more preferably about 5 to about 7, and even more preferablyabout 6 to about 7. The pH is commonly defined as the −log [H⁺], where[H⁺] denotes the molar concentration of hydrogen ions. The addition ofan acid in the immersion fluid may even improve the chemicalamplification effect in the photoresist.

Referring now to FIG. 4 a, a cross-sectional view shows the immersionfluid 60 (e.g., water) in contact with the final optic lens 50. Amagnified perspective 300 of the interface between the water and asurface of the final optic lens is illustrated in FIG. 4 b. The materialconstituting the optic lens may dissolve into the immersion fluid, to anextent that may be very small. The lens material may be fused silica(SiO₂), magnesium fluoride (MgF₂), or calcium fluoride (CaF₂). Forexample, in a preferred embodiment, the lens material is calciumfluoride. Calcium fluoride dissolves in water to form aqueous calciumions (Ca⁺) and fluoride ions (F⁻), according to the followingequilibria:CaF₂(s)≈Ca²⁺(aq)+2F⁻(aq)  (Eq. 2)

About 3×10⁻⁴ moles of solid CaF₂ dissolves in a liter of water with a pHof 7 at room temperature. The water or immersion fluid used inlithography may be constantly flowing, so that the CaF₂ lens materialmay be constantly being dissolved and removed with the flow of water.The dissolved amount may be large when the equipment is used for anextended period of time, e.g., a few years. Dissolution of the lensmaterial may be non-uniform across different regions of the lens so thatit results in a distortion of the lens surface. This will potentiallyresult in image distortion and malfunction of the equipment.

FIG. 5 shows the molar solubility of CaF₂ in water with various pH oracidity. When the pH of water is reduced from 7, i.e., the acidity isincreased, the solubility of CaF₂ increases. The increase in thesolubility of CaF₂ is more significant below a pH of 4. Dissolution ofcalcium fluoride in acidic solution is due to the following reason. Whenacid or hydrogen ions are added into the water, combination of hydrogenions and fluoride ions (F—) occurs to form aqueous hydrogen fluoride(HF):H⁺(aq)+F⁻(aq)≈HF(aq)  (Eq. 3)

Since fluoride ions are consumed by the formation of aqueous hydrogenfluoride, the equilibria described by Eq. 2 shifts to the right,resulting in more dissolution of solid CaF₂. This worsens the loss ofCaF₂ material from the lens. Therefore, while a pH of less than 7 ispreferred for suppression of the acid catalyst depletion effect, the pHshould not be too low to result in significant dissolution of thecalcium fluoride lens material. Therefore, while this inventionspecifies that the immersion fluid should have a pH in the range of lessthan 7, the pH should be preferably about 2 to about 7, more preferablyabout 4 to about 7, even more preferably about 5 to about 7, and evenmore preferably about 6 to about 7.

According to a further preferred embodiment of the present invention,the common ion effect may be exploited to reduce the solubility of thelens material. For example, if the lens material in contact with thewater is CaF₂, the water may intentionally comprise a fluoride ion of apredetermined concentration to suppress the dissolution of CaF₂.According to the common ion effect, the intentional addition of fluorideions into the water shifts the equilibria described by Eq. 2 to theleft, and effectively suppresses the CaF₂ dissolution.

Referring now to FIG. 6, the calculated molar solubility of CaF₂ isreduced with increased fluoride concentration in the immersion fluid.The fluoride ion may be introduced, for example, by the addition of afluoride-containing compound in the water. The fluoride-containingcompound may be a highly soluble fluoride containing compounds such assodium fluoride, potassium fluoride, hydrogen fluoride, or combinationsthereof. In a preferred embodiment, the fluoride-containing compound ishydrogen fluoride, and more preferably a combination of hydrogenfluoride and sodium fluoride. The fluoride concentration is preferablyabove 0.01 mole/L, more preferably above 0.05 mole/L, and even morepreferably above 0.1 mole/L.

It should be noted that the immersion lithographic system as describedherein may employ one or more versions of immersion lithography that arealready known. For example, the system may employ local immersion wherethe immersion fluid is disposed between the final optic lens and aportion of the wafer to be exposed. In another example, the system mayemploy wafer immersion where the entire wafer is immersed in theimmersion fluid. In yet another example, the system may employ stageimmersion where the entire stage is immersed in the immersion fluid.

While several embodiments of the invention, together with modificationsthereof, have been described in detail herein and illustrated in theaccompanying drawings, it will be evident that various modifications arepossible without departing from the scope of the preferred embodiment.The examples given are intended to be illustrative rather thanexclusive.

1. An immersion lithographic system comprising: an optical surface; awafer support for holding a workpiece; and an immersion fluid with a pHless than 7, disposed between the optical surface and the wafer support,said immersion fluid contacting at least a portion of the opticalsurface.
 2. The system of claim 1 wherein the immersion fluid compriseswater.
 3. The system of claim 2 wherein the pH of said immersion fluidis in the range of 2 to
 7. 4. The system of claim 3 wherein the pH ofsaid immersion fluid is in the range of 4 to
 7. 5. The system of claim 4wherein the pH of said immersion fluid is in the range of 5 to
 7. 6. Thesystem of claim 5 wherein the pH of said immersion fluid is in the rangeof 6 to
 7. 7. The system of claim 1 wherein the immersion fluidcomprises hydrogen ions with a concentration in the range of 10⁻⁷ to10⁻² mole/L.
 8. The system of claim 1 wherein the immersion fluidcomprises hydrogen ions with a concentration in the range of 10⁻⁷ to10⁻⁴ mole/L.
 9. The system of claim 1 wherein the immersion fluidcomprises hydrogen ions with a concentration in the range of 10⁻⁷ to10⁻⁵ mole/L.
 10. The system of claim 1 wherein the immersion fluidcomprises hydrogen ions with a concentration in the range of 10⁻⁷ to10⁻⁶ mole/L.
 11. The system of claim 1 wherein the optical surfacecomprises silicon oxide.
 12. The system of claim 1 wherein the opticalsurface comprises fused silica.
 13. The system of claim 1 wherein theoptical surface comprises calcium fluoride.
 14. The system of claim 13further comprising a fluoride-containing compound dissolved in theimmersion fluid.
 15. The system of claim 14 wherein the fluoridecontaining compound comprises at least one material selected from thegroup consisting of sodium fluoride, potassium fluoride, hydrogenfluoride, and combinations thereof.
 16. The system of claim 13 whereinthe immersion fluid comprises fluoride ions with a concentration in therange of greater than 0.01 mole/L.
 17. The system of claim 16 whereinthe immersion fluid comprises fluoride ions with a concentration in therange of greater than 0.05 mole/L.
 18. The system of claim 17 whereinthe immersion fluid comprises fluoride ions with a concentration in therange of greater than 0.1 mole/L.
 19. The system of claim 1 furthercomprising a semiconductor structure on the wafer support structure,said semiconductor structure having a topmost photosensitive layer. 20.The system of claim 19 wherein the photosensitive layer comprises achemically amplified photoresist.
 21. The system of claim 19 wherein theimmersion fluid is in contact with a portion of the photosensitivelayer.
 22. The system of claim 19 wherein the semiconductor structure isimmersed in the immersion fluid.
 23. The system of claim 19 wherein thesemiconductor structure comprises an integrated circuit that includestransistors with a gate length not greater than 50 nm.
 24. The system ofclaim 19 wherein the wafer support is immersed in the immersion fluid.25. An immersion lithographic system for projecting light having awavelength of less than 197 nm, the system comprising: an opticalsurface; water with a pH less than 7, said water contacting at least aportion of the optical surface; and a semiconductor structure having atopmost photoresist layer, a portion of said photoresist being incontact with the water.
 26. The system of claim 25 wherein the pH of thewater is in the range of 2 to
 7. 27. The system of claim 26 wherein thepH of the water is in the range of 5 to
 7. 28. The system of claim 27wherein the pH of the water is in the range of 6 to
 7. 29. The system ofclaim 25 wherein the optical surface comprises silicon oxide.
 30. Thesystem of claim 25 wherein the optical surface comprises calciumfluoride.
 31. The system of claim 25 further comprising a fluoridecontaining compound dissolved in the water.
 32. The system of claim 31wherein the fluoride containing compound comprises at least one materialselected from the group consisting of sodium fluoride, potassiumfluoride, hydrogen fluoride, and combinations thereof.
 33. The system ofclaim 25 wherein the water comprises fluoride ions with a concentrationin the range of greater than 0.01 mole/L.
 34. The system of claim 25wherein the photoresist layer comprises a chemically amplifiedphotoresist.
 35. The system of claim 25 wherein the semiconductorstructure is immersed in the water.
 36. The system of claim 25 furthercomprising a wafer support underlying the semiconductor structure. 37.The system of claim 36 wherein the wafer support is immersed in thewater.
 38. A method for illuminating a semiconductor structure having atopmost photoresist layer, comprising the steps of: introducing animmersion fluid into a space between an optical surface and thephotoresist layer, said immersion fluid having a pH of less than 7; anddirecting optical energy through the immersion fluid and onto saidphotoresist layer.
 39. The method of claim 38 wherein the immersionfluid comprises water.
 40. The method of claim 38 wherein the pH of theimmersion fluid is in the range of 2 to
 7. 41. The method of claim 40wherein the pH of the immersion fluid is in the range of 4 to
 7. 42. Themethod of claim 41 wherein the pH of the immersion fluid is in the rangeof 5 to
 7. 43. The method of claim 42 wherein the pH of the immersionfluid is in the range of 6 to
 7. 44. The method of claim 38 wherein theimmersion fluid comprises hydrogen ions with a concentration in therange of 10⁻⁷ to 10⁻² mole/L.
 45. The method of claim 44 wherein theimmersion fluid comprises hydrogen ions with a concentration in therange of 10⁻⁷ to 10⁻⁴ mole/L.
 46. The method of claim 45 wherein theimmersion fluid comprises hydrogen ions with a concentration in therange of 10⁻⁷ to 10⁻⁵ mole/L.
 47. The method of claim 46 wherein theimmersion fluid comprises hydrogen ions with a concentration in therange of 10⁻⁷ to 10⁻⁶ mole/L.
 48. The method of claim 38 wherein theoptical surface comprises silicon oxide.
 49. The method of claim 38wherein the optical surface comprises calcium fluoride.
 50. The methodof claim 49 wherein the immersion fluid comprises water.
 51. The methodof claim 50 further comprising a fluoride containing compound dissolvedin the water.
 52. The method of claim 51 wherein the fluoride containingcompound comprises a compound selected from the group consisting ofsodium fluoride, potassium fluoride, hydrogen fluoride, or combinationsthereof.
 53. The method of claim 49 wherein the immersion fluidcomprises fluoride ions with a concentration in the range of greaterthan 0.01 mole/L.
 54. The method of claim 49 wherein the immersion fluidcomprises fluoride ions with a concentration in the range of greaterthan 0.05 mole/L.
 55. The method of claim 49 wherein the immersion fluidcomprises fluoride ions with a concentration in the range of greaterthan 0.1 mole/L.
 56. The method of claim 38 wherein the photoresistlayer comprises a chemically amplified photoresist.
 57. The method ofclaim 38 wherein the immersion fluid is in contact with a portion of thephotoresist layer.
 58. The method of claim 38 wherein the semiconductorstructure is immersed in the immersion fluid.
 59. The method of claim 38further comprising a wafer support underlying the semiconductorstructure.
 60. The method of claim 59 wherein the wafer support isimmersed in the immersion fluid.
 61. The method of claim 38 furthercomprising a step of developing the photoresist layer.
 62. The method ofclaim 61 wherein the step of developing the photoresist layer comprisesimmersing the photoresist in a tetramethylammonia hyroxide solution. 63.A method for illuminating a semiconductor structure having a topmostphotoresist layer, comprising the steps of: introducing water into aspace between an optical surface and the photoresist layer said waterhaving a pH of less than 7; and directing light with a wavelength ofless than 450 nm through the water and onto said photoresist.
 64. Themethod of claim 63 wherein the pH of the water is in the range of 2 to7.
 65. The method of claim 64 wherein the pH of the water is in therange of 5 to
 7. 66. The method of claim 65 wherein the pH of the wateris in the range of 6 to
 7. 67. The method of claim 63 wherein theoptical surface comprises silicon oxide.
 68. The method of claim 63wherein the optical surface comprises calcium fluoride.
 69. The methodof claim 63 further comprising a fluoride containing compound dissolvedin the water.
 70. The method of claim 69 wherein the fluoride containingcompound comprises a compound selected from the group consisting ofsodium fluoride, potassium fluoride, hydrogen fluoride, and combinationsthereof.
 71. The method of claim 63 wherein the water comprises fluorideions with a concentration in the range of greater than 0.01 mole/L. 72.The method of claim 63 wherein the photoresist layer comprises achemically amplified photoresist.
 73. The method of claim 63 wherein thesemiconductor structure is immersed in the water.
 74. The method ofclaim 63 further comprising a wafer support underlying the semiconductorstructure.
 75. The method of claim 74 wherein the wafer support isimmersed in the water.